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                >V8PM153>規(guī)格書(shū)列表
                
    
            
    
                
    
                    
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    V8PM153
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A
     Very low profile - typical height of 1.1 mm\nTrench MOS Schottky technology\nLow forward voltage drop, low power losses;
    Vishay
    威世
    

    V8PM153HM3SLASHH
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A
    
? Very low profile - typical height of 1.1 mm
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
? AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153HM3SLASHI
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A
    
? Very low profile - typical height of 1.1 mm
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
? AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153-M3SLASHH
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A
    
? Very low profile - typical height of 1.1 mm
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
? AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153-M3SLASHI
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 4 A
    
? Very low profile - typical height of 1.1 mm
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
? AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153HM3/H
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153HM3/I
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153-M3/H
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    V8PM153-M3/I
    High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    文件：97.66 Kbytes 頁(yè)數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    
            
    
		
    
            
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    Vishay General Semiconductor -
    		

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    TO-277A(SMPC)
    		

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    VIS
    		

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    加QQ:78517935原裝正品有單必成
    		
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