| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
V8P22C | High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2 A ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering c 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2 A ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering c 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2 A ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering c 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2 A ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - Automotive ordering c 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier 文件：97.58 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
V8P22C | High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2 A Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology; | Vishay 威世 | Vishay |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - |
25+ |
TO-277 3-PowerDFN |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
Vishay |
23+ |
4500 |
加QQ:78517935原裝正品有單必成 |
詢價(jià) | |||
VISHAY/威世 |
24+ |
TO-277 |
98000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-277A(SMPC) |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
VISHAY |
25+ |
TO-277 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
VISHAY/威世 |
2023+ |
SMD |
8635 |
一級(jí)代理優(yōu)勢(shì)現(xiàn)貨,全新正品直營(yíng)店 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-277 |
50000 |
只做原裝正品 |
詢價(jià) | ||
Vishay |
23+ |
集成電路(IC) |
5864 |
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低 |
詢價(jià) | ||
24+ |
N/A |
82000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VISHAY |
19+ |
TO-277 |
200000 |
詢價(jià) |
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