絲?。?strong>V6W；Package：SOP-8；Low-Voltage Supervisory Circuits with Power-Fail Detector

Features ? Precision Low-Voltage Monitoring and Power-Fail Detector ? 200-ms (typical) Reset Timeout ? Manual Reset Input ? Independent Watchdog Timer ? Reset Output Stage ? Push-pull Active-low Output (TPV706) ? Low Power Consumption: 4 μA ? Guaranteed Reset Output Valid to VCC = 1 V ?

文件：1.33741 Mbytes 頁數(shù)：16 Pages

3PEAK

思瑞浦

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co

文件：90.66 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co

文件：90.66 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co

文件：90.06 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co

文件：90.06 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：123.04 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：124.13 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：116.08 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：123.04 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：97.83 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司