Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available: -

文件：127.32 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：102.18 Kbytes 頁(yè)數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available: -

文件：127.32 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：100.03 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：110.14 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：100.03 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

Trench MOS Schottky technology\n Very low profile - typical height of 1.7 mm\n Ideal for automated placement\n\n ;

Vishay

威世

肖特基二極管與整流器 60A, 120V, SMPD, TRENCH SKY RECT.

Vishay

威世

Package：TO-263-3，D2Pak（2 引線 + 凸片）變型；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 120V 30A TO263AC

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D2Pak（2 引線 + 凸片）變型；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 120V SMPD

Vishay General Semiconductor - Diodes Division