Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to IEC 61249-2-21 definit

文件：84.68 Kbytes 頁數：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：84.37 Kbytes 頁數：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC ? Halogen-free according to IEC 61249-2-21 definit

文件：84.68 Kbytes 頁數：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：84.37 Kbytes 頁數：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世

Package：TO-3P-3 整包；包裝：散裝 類別：分立半導體產品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 200V TO3PW

Vishay General Semiconductor - Diodes Division