LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16

Description The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a sy

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V54C3256164VBUC/T LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16

Description\nThe V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system ■ 4 banks x 4Mbit x 16 organization\n■ High speed data transfer rates up to 166 MHz\n■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge\n■ Single Pulsed RAS Interface\n■ Data Mask for Read/Write Control\n■ Four Banks controlled by BA0 & BA1\n■ Programmable CAS Latency: ;

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LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16

Description The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a sy

文件：651.16 Kbytes 頁數(shù)：45 Pages

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256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

文件：853.33 Kbytes 頁數(shù)：52 Pages

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256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

文件：853.33 Kbytes 頁數(shù)：52 Pages

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