| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
V20W | PIEZOELECTRIC ENERGY HARVESTERS 文件：3.1748 Mbytes 頁(yè)數(shù)：24 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | |
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ? Very low profile - typical height of 1.3 mm ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available - A 文件：91.41 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co 文件：89.84 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co 文件：89.84 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co 文件：90.69 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definitions of compliance please see www.vishay.co 文件：90.69 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：122.54 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：123.62 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：115.78 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Trench MOS Barrier Schottky Rectifier 文件：122.54 Kbytes 頁(yè)數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
17+ |
TO252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
VISHAY |
25+23+ |
TO-252(DP |
22900 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
VISHAY/威世 |
2447 |
TO252 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
VISHAY |
25+ |
TO-252 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
AVXKYOCERA |
24+ |
0805 |
33200 |
原裝正品價(jià)格優(yōu)勢(shì)!歡迎詢價(jià)QQ:385913858TEL:15 |
詢價(jià) | ||
VISHAY |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-252(DPAK) |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Vishay Semiconductor Diodes Di |
22+ |
TO252 (DPak) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO-252(DPAK) |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
VISHAY |
1504+ |
TO-252 |
2944 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
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