Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization:? for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i

文件：99.41 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件：100.34 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization:? for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use i

文件：99.41 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 10A 100V TO-220AB

Vishay General Semiconductor - Diodes Division