首頁 >V20100S-E3>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
V20100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JES 文件:157.77 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V20100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件:215.28 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V20100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | Vishay 威世 | Vishay | |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件:168.62 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件:215.28 Kbytes 頁數(shù):6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 文件:168.62 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.71 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件:163.71 Kbytes 頁數(shù):5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ; | Vishay 威世 | Vishay | ||
Package:TO-220-3;包裝:管件 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 100V 20A TO220AB | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
中性 |
23+ |
TO220-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VIS |
22+ |
TO-220AB |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
VIS |
25+ |
TO-TO-220AB |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
22+ |
TO220-3 |
20000 |
只做原裝 |
詢價(jià) | |||
Vishay |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
VISHAY |
25+ |
TO-220 |
9000 |
普通 |
詢價(jià) | ||
VISHAY/威世 |
2447 |
TO220-3 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
VISHAY |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
MCC/美微科 |
23+ |
TO220 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) |
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