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          首頁 >V10PL45>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          V10PL45

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:608.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3

          Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:88.4 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3

          High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for defi

          文件:103.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3/86A

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:608.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3/87A

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:608.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3_V01

          High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for defi

          文件:103.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3SLASH86A

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:608.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3SLASH87A

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorizat

          文件:608.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3_15

          High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          文件:86.25 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          V10PL45-M3

          High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A

          分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

          Vishay

          威世

          詳細(xì)參數(shù)

          • 型號(hào):

            V10PL45

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          VISHAY
          24+
          TO-277A(SMPC
          20000
          全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!!
          詢價(jià)
          VISHAY
          23+
          TO-277A
          20000
          原裝正品,假一罰十
          詢價(jià)
          Vishay
          24+
          NA
          3000
          進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
          詢價(jià)
          VISHAY
          25+23+
          TO-277A(S
          23436
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          VISHAY
          19+
          TO277A
          200000
          詢價(jià)
          VISHAY/威世
          24+
          TO-277
          98000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          VISHAY/威世
          2447
          TO-277A
          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          VISHAY/威世
          21+
          TO-277A-3
          30000
          百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅
          詢價(jià)
          VISHAY
          25+
          TO-277
          3675
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          VISHAY/威世
          21+
          TO-277A-3
          1773
          只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
          詢價(jià)
          更多V10PL45供應(yīng)商 更新時(shí)間2026-1-21 13:28:00
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