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    首頁(yè) >V10P45>規(guī)格書(shū)列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    V10P45-M3

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency op

    文件:90.62 Kbytes 頁(yè)數(shù):6 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45-M386A

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency op

    文件:90.62 Kbytes 頁(yè)數(shù):6 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45-M3-86A

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency op

    文件:86.81 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45-M3-87A

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency op

    文件:86.81 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S

    SMD Photovoltaic Solar Cell Protection Schottky Rectifier

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Compliant to RoHS Directive 2002/9

    文件:86.78 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S-M3

    SMD Photovoltaic Solar Cell Protection TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for defi

    文件:95.83 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S-M3

    Low forward voltage drop, low power losses

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Compliant to RoHS Directive 2002/9

    文件:90.94 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S-M3_V01

    SMD Photovoltaic Solar Cell Protection TMBS? (Trench MOS Barrier Schottky) Rectifier

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for defi

    文件:95.83 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S-M3-86A

    SMD Photovoltaic Solar Cell Protection Schottky Rectifier

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Compliant to RoHS Directive 2002/9

    文件:86.78 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    V10P45S-M3-87A

    SMD Photovoltaic Solar Cell Protection Schottky Rectifier

    FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Compliant to RoHS Directive 2002/9

    文件:86.78 Kbytes 頁(yè)數(shù):5 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    詳細(xì)參數(shù)

    • 型號(hào):

      V10P45

    • 制造商:

      VISHAY

    • 制造商全稱:

      Vishay Siliconix

    • 功能描述:

      High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    VISHAY/威世
    25+
    TO-277
    20300
    VISHAY/威世原裝特價(jià)V10P45即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
    詢價(jià)
    VISHAY
    24+
    TO-277A(SMPC)
    5000
    只做原裝公司現(xiàn)貨
    詢價(jià)
    VISHAY
    24+
    SMD
    5500
    長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談
    詢價(jià)
    TO-277A
    23+
    NA
    15659
    振宏微專業(yè)只做正品,假一罰百!
    詢價(jià)
    VISHAY
    25+23+
    TO-277A(SMPC)
    21531
    絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
    詢價(jià)
    VISHAY
    19+
    TO-277A(SMPC)
    200000
    詢價(jià)
    VISHAY/威世
    24+
    TO-277
    98000
    原裝現(xiàn)貨假一罰十
    詢價(jià)
    VISHY
    25+
    TO277
    12000
    普通
    詢價(jià)
    VISHAY
    25+
    TO-277
    3675
    就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
    詢價(jià)
    VISHAY/威世
    21+
    原廠封裝
    1975
    詢價(jià)
    更多V10P45供應(yīng)商 更新時(shí)間2026-1-22 9:05:00

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