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    首頁 >UT3419>規(guī)格書列表

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    UT3419

    20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) ≤ 75 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤

    文件:145.39 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    UT3419

    20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    The UTC?UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. It is ESD protection. The UTC?UT3419 can be applied in PWM applications or used as a load switch. ? ESD Rating Is Up To 2000V HBM \n? RDS(ON) < 95m? (VGS = -4.5V) \n? RDS(ON) < 145m ? (VGS = -2.5V);

    UTC

    友順

    UT3419G-AE3-R

    P-Channel 20-V (D-S) MOSFET

    FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch ? PA Switch ? DC/DC Converters

    文件:472.15 Kbytes 頁數(shù):9 Pages

    VBSEMI

    微碧半導(dǎo)體

    UT3419G-AE3-R

    20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) ≤ 75 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤

    文件:145.39 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    UT3419L-AE3-R

    20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * RDS(ON) ≤ 75 mΩ @ VGS=-10V, ID=-3.5A * RDS(ON) ≤

    文件:145.39 Kbytes 頁數(shù):3 Pages

    UTC

    友順

    UT3419_15

    ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    文件:204.53 Kbytes 頁數(shù):4 Pages

    UTC

    友順

    UT3419G-AE2-R

    ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    文件:204.53 Kbytes 頁數(shù):4 Pages

    UTC

    友順

    UT3419G-AE3-R

    ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

    文件:204.53 Kbytes 頁數(shù):4 Pages

    UTC

    友順

    技術(shù)參數(shù)

    • VGS(±V):

      ±12

    • ID(A):

      -3.5

    • RDS(ON)MAX.(mΩ)atVGS=10V:

      75

    • RDS(ON)MAX.(mΩ)atVGS=4.5V:

      95

    • RDS(ON)MAX.(mΩ)atVGS=2.5V:

      145

    • CISSTYP.(pF):

      585

    • COSSTYP.(pF):

      130

    • CRSSTYP.(pF):

      110

    • QgTYP.(nC):

      8.5

    • QgsTYP.(nC):

      2

    • QgdTYP.(nC):

      2

    • VGS(th)(V)MIN.:

      -0.7

    • VGS(th)(V)MAX.:

      -1.4

    • Package:

      SOT-23_SOT-23-3_DFN1820-6_DFN2030-6_DFN2020-8_PDFN3×3_PDFN5×6

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    更多UT3419供應(yīng)商 更新時(shí)間2026-1-22 15:16:00

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