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                >UT3418>規(guī)格書列表
                
          
            
          
                
          
                    
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          UT3418
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          
DESCRIPTION
The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 60mΩ @ VGS = 10 V
   RDS(ON) ≤ 70mΩ @ VGS = 4.5 V
   RDS(ON)
          文件：149.45 Kbytes 頁數(shù)：3 Pages
          UTC
          友順
          

          UT3418
          Trench Power MOSFET? (N-CH)
          The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable?for use as a load switch or in PWM applications.  ? RDS(ON)?
          UTC
          友順
          

          UT3418G-AE3-R
          N-Channel 30-V (D-S) MOSFET
          
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET? Power MOSFET
? 100  Rg Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converter
          文件：492.79 Kbytes 頁數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          UT3418G-AE3-R
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          
DESCRIPTION
The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 60mΩ @ VGS = 10 V
   RDS(ON) ≤ 70mΩ @ VGS = 4.5 V
   RDS(ON)
          文件：149.45 Kbytes 頁數(shù)：3 Pages
          UTC
          友順
          

          UT3418L-AE3-R
          N-Channel 30-V (D-S) MOSFET
          
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET? Power MOSFET
? 100  Rg Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converter
          文件：492.11 Kbytes 頁數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          UT3418L-AE3-R
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          
DESCRIPTION
The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 60mΩ @ VGS = 10 V
   RDS(ON) ≤ 70mΩ @ VGS = 4.5 V
   RDS(ON)
          文件：149.45 Kbytes 頁數(shù)：3 Pages
          UTC
          友順
          

          UT3418_15
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          文件：173.14 Kbytes 頁數(shù)：3 Pages
          UTC
          友順
          

          UT3418G-AE3-R
          N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
          文件：173.14 Kbytes 頁數(shù)：3 Pages
          UTC
          友順
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • VGS(±V)：
            ±12
          • ID(A)：
            3.8
          • RDS(ON)MAX.(mΩ)atVGS=10V：
            60
          • RDS(ON)MAX.(mΩ)atVGS=4.5V：
            70
          • RDS(ON)MAX.(mΩ)atVGS=2.5V：
            140
          • CISSTYP.(pF)：
            186
          • COSSTYP.(pF)：
            31
          • CRSSTYP.(pF)：
            24
          • QgTYP.(nC)：
            7
          • QgsTYP.(nC)：
            1.2
          • QgdTYP.(nC)：
            0.6
          • VGS(th)(V)MIN.：
            0.6
          • VGS(th)(V)MAX.：
            1.8
          • Package：
            SOT-23_SOT-23-3_SOT-323
          
            
          
        
          
            
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