NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION The μPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage. FEATURES

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NEC

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GaAs INTEGRATED CIRCUIT

FEATURES ? Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz ? High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz ? High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz

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RENESAS

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L-BAND HIGH POWER SPDT SWITCH

文件：86.16 Kbytes 頁數(shù)：10 Pages

NEC

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L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECs UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation. FEATURES ? LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1

文件：547 Kbytes 頁數(shù)：9 Pages

CEL

Package：6-TSSOP，SC-88，SOT-363；包裝：卷帶（TR） 類別：RF/IF，射頻/中頻和 RFID 射頻開關(guān) 描述：IC RF SWITCH SPDT 2.5GHZ 6-SMINI

CEL