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首頁 >UPD41257>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
UPD41257	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257	文件：300 bytes Page：1 Pages	262144 X 1-BIT DYNAMIC NMOS RAM	Renesas 瑞薩	Renesas
UPD41257C-12	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257C-15	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257C-20	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257L-12	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257L-15	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC
UPD41257L-20	文件：736.17 Kbytes Page：16 Pages	262144 X 1-BIT DYNAMIC NMOS RAM Description The μPD41257 is a 262,144-word by 1-bit dynamic NMOS RAM designed to operate from a single +5-volt power supply. A double-polylayer N-channel silicon gate fabricated process provides for high storage cell density, high performance, ans high reliability. 文件：736.17 Kbytes 頁數(shù)：16 Pages	NEC 瑞薩	NEC

詳細(xì)參數(shù)

型號(hào)：
UPD41257
制造商：
NEC
制造商全稱：
NEC
功能描述：
262144 X 1-BIT DYNAMIC NMOS RAM

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	UPD41257V-12	NEC	24+	ZIP-16	212		詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	UPD41257C	NEC	23+	DIP-16	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO	詢價(jià)
標(biāo)準(zhǔn)國際(香港)有限公司	UPD41262V-12X	NEC	25+		3	公司優(yōu)勢庫存熱賣中!!	詢價(jià)
深圳市聯(lián)世界科技有限公司	UPD41264-15	NEC	24+/25+		57	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
上海鑫科潤電子科技有限公司	UPD41264C-12	NEC	8921	DIP-24	120	原裝現(xiàn)貨海量庫存歡迎咨詢	詢價(jià)
深圳市佳鑫美電子科技有限公司	UPD41264C-12	原裝	25+	DIP	2700	全新原裝自家現(xiàn)貨優(yōu)勢!	詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	UPD41264C-12	NEC	2447	DIP	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價(jià)
深圳市宇創(chuàng)芯科技有限公司	UPD41264C-12	NEC	24+	DIP-24	9600	原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	UPD41264C-12	NEC	23+	DIP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市恒達(dá)億科技有限公司	UPD41264C-12	NEC	25+	DIP	4500	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!	詢價(jià)

更多UPD41257供應(yīng)商更新時(shí)間2026-1-20 16:01:00

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