Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The μPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

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UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

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NEC

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900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The μPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

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UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The μPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block ? LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ′ 7, 8)

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Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The μPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

文件：223.47 Kbytes 頁數(shù)：20 Pages

NEC

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High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES ? Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.) ? VIO Temperature Drift ±7 μV/?C (TYP.) ? Input Bias Current 50 pA (TYP.) ? Slew Rate 25 V/μs (TYP.) ? Unity Gain Frequency 6 MHz (TYP.) ? Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz) ? Stable operation again

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High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

μPC813 is a high-speed version of μPC811. The J-FET input operational amplifier features a high-speed PNP transistor in the output stage for stable operation at a high slew rate of 25V/us with a gain of 1 (full feedback) The resistor-trimming method proven in other Renesas High-Precision Op-Amp and ? Input Offset Voltage: ±1 mV (TYP.) (±2.5 mV MAX.)\n? VIO Temperature Drift: ±7 μV/°C (TYP.)\n? Input Bias Current: 50 pA (TYP.)\n? Slew Rate: 25 V/μs (TYP.)\n? Unity Gain Frequency: 6 MHz (TYP.)\n? Input Equivalent Noise Voltage Density: 19 nV√ Hz (TYP.) (f = 1 kHz)\n? Stable operation against cap;

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功率場(chǎng)效應(yīng)晶體管

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General-purpose Linear-Operational Amplifiers (op-amp)

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