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          首頁 >UPC271>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          UPC2711T-E3

          2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

          文件:185.93 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          UPC2711T-E3

          3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

          DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

          文件:140.58 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC2712T

          2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

          DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

          文件:96.88 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC2712T

          2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

          文件:159.19 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          UPC2712T-E3

          2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

          文件:159.19 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          UPC2712T-E3

          2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

          DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a

          文件:96.88 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC2713T

          1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

          DESCRIPTION The μPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

          文件:95.73 Kbytes 頁數(shù):6 Pages

          NEC

          瑞薩

          UPC2714T

          BIPOLAR ANALOG INTEGRATED CIRCUIT

          1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          文件:636.99 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          UPC2714T-E3

          BIPOLAR ANALOG INTEGRATED CIRCUIT

          1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          文件:636.99 Kbytes 頁數(shù):14 Pages

          RENESAS

          瑞薩

          UPC2715

          1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

          1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES ? Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. ? High power gain : 19 dB TYP. @ f = 0.5 GHz ? Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

          文件:148.25 Kbytes 頁數(shù):12 Pages

          NEC

          瑞薩

          技術(shù)參數(shù)

          • Response Time TPHL (μs) typ.:

            0.2

          • Production Status:

            EOL

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          NEC
          24+
          SMD
          3000
          自己現(xiàn)貨
          詢價(jià)
          NEC
          24+
          SOP-8
          5800
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          中性/XM
          23+
          SOP-8
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          NEC
          25+
          SOP8
          3000
          全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
          詢價(jià)
          NEC
          10+
          DIP8
          7800
          全新原裝正品,現(xiàn)貨銷售
          詢價(jià)
          NEC
          05+
          原廠原裝
          551
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          NEC
          25+
          SOT26
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          NEC
          17+
          SOT23-6
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          NEC
          0223+
          SOP8
          2500
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價(jià)
          NEC
          23+
          DIP/8/磁
          7000
          絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          更多UPC271供應(yīng)商 更新時(shí)間2026-1-19 16:00:00
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