MOS FET WITH SCHOTTKY BARRIER DIODE

DESCRIPTION The μ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for a

文件：382.13 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

文件：144.73 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

Renesas

瑞薩

GaAs INTEGRATED CIRCUIT

FEATURES ? Wide operating frequency range fin = 8 to 13 GHz @TA = 25 °C ? Low phase Noise ? Hermetically sealed package assuers high reliability

文件：220.84 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

GaAs INTEGRATED CIRCUIT

Ku BAND PRESCALER CHIPS

文件：457.52 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

Surface Mount Ultrafast Recovery Rectifier

文件：472.5 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微