MOS FIELD EFFECT TRANSISTOR

Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features ? Dual chip type ? Low on-state resistance ? RDS(on) = 56 m? MAX. (VGS = 10 V, ID = 2.5 A) ? RDS(on) = 72 m? MAX. (VGS = 4.5 V, ID = 2.5 A) ? Low gate charge ? QG

文件：142.88 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features ? Dual chip type ? Low on-state resistance ? RDS(on) = 56 m? MAX. (VGS = 10 V, ID = 2.5 A) ? RDS(on) = 72 m? MAX. (VGS = 4.5 V, ID = 2.5 A) ? Low gate charge ? QG

文件：142.88 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features ? Dual chip type ? Low on-state resistance ? RDS(on) = 56 m? MAX. (VGS = 10 V, ID = 2.5 A) ? RDS(on) = 72 m? MAX. (VGS = 4.5 V, ID = 2.5 A) ? Low gate charge ? QG

文件：142.88 Kbytes 頁數(shù)：8 Pages

RENESAS

瑞薩

DUAL N-channel MOSFET

文件：383.95 Kbytes 頁數(shù)：7 Pages

RENESAS

瑞薩

Nch Dual Power Mosfet 60V 5A 56Mohm Power Sop8

The UPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. ? Dual chip type\n? Low on-state resistance RDS(on) = 56 m? MAX. (VGS = 10 V, ID = 2.5 A) RDS(on) = 72 m? MAX. (VGS = 4.5 V, ID = 2.5 A)\n? Low gate charge QG = 13.4 nC TYP. (VGS = 10 V)\n? Small and surface mount package (SOP-8)\n文檔文檔標題類型日期Power MOS FET APPLICATION NOTEPDF3.27 MB日本語應用文檔 2022年4月25日A;

Renesas

瑞薩