MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES ? Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) ? Built-in gate protection d

文件：373.78 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES ? Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) ? Built-in gate protection d

文件：373.78 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES ? Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) ? Built-in gate protection d

文件：373.78 Kbytes 頁(yè)數(shù)：9 Pages

RENESAS

瑞薩

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features ? DC/DC converter. ? Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] ? Low ON-resistance. ? 4V drive. [SBD] ? S

文件：48.51 Kbytes 頁(yè)數(shù)：6 Pages

SANYO

三洋

Ultra low dropout, 800mA, CMOS LDO

文件：768.8 Kbytes 頁(yè)數(shù)：9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司

Ultra low dropout, 500mA, CMOS LDO

文件：879.51 Kbytes 頁(yè)數(shù)：10 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韋爾股份上海韋爾半導(dǎo)體股份有限公司