MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

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MOS FIELD EFFECT TRANSISTOR

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MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 頁數(shù)：8 Pages

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P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：456.74 Kbytes 頁數(shù)：9 Pages

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P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Available ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switch

文件：456.85 Kbytes 頁數(shù)：9 Pages

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微碧半導(dǎo)體

MOS FIELD EFFECT TRANSISTOR

Description The μPA1931 is a switching device, which can be driven directly by a 4.5 V power source. The μPA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features ● 4.5 V dri

文件：123.64 Kbytes 頁數(shù)：8 Pages

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Pch Single Power Mosfet -40V -4.5A 65Mohm

The UPA1931TE is a Pch Single Power Mosfet -40V -4.5A 65Mohm. ? 4.5 V drive available\n? Low on-state resistance RDS(on)1 = 65 mΩ MAX. (VGS = ?10 V, ID = ?1.8 A) RDS(on)2 = 100 mΩ MAX. (VGS = ?4.5 V, ID = ?1.8 A)\n文檔文檔標題類型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語應(yīng)用文檔 2021年4月16日UPA1931 Data SheetPDF117 KB數(shù)據(jù)手冊 2012年5月9日功率MOS FET 功率MOS FET使用時的注意事項;

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