SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The μPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES ? Dual chip type ? Low on-resistance RDS(on)1 = 47.0 m? MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 m? MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 m? MAX. (

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NEC

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Old Company Name in Catalogs and Other Documents

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RENESAS

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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe μPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters.FEATURES\n? Dual chip type\n? Low on-resistance\n?? RDS(on)1 = 47.0 m? MAX. (VGS = 10 V, ID = 2.3 A)\n?? RDS(on)2 = 57.0 m? MAX. (VGS = 4.5 V, ID = 2.3 A)\n?? RDS(on)3 = 66.0 m? MAX. (VGS = 4.0 V, ID = 2. ? Dual chip type\n? Low on-resistance\n?? RDS(on)1 = 47.0 m? MAX. (VGS = 10 V, ID = 2.3 A)\n?? RDS(on)2 = 57.0 m? MAX. (VGS = 4.5 V, ID = 2.3 A)\n?? RDS(on)3 = 66.0 m? MAX. (VGS = 4.0 V, ID = 2.3 A)\n? Low input capacitance\n?? Ciss = 870 pF TYP.\n? Built-in G-S protection diode\n? Small and surface;

Renesas

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SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The μPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. FEATURES ? Dual chip type ? Low on-resistance RDS(on)1 = 47.0 m? MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 m? MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 m? MAX. (

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NEC

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nNch Dual Power MOSFET 60V 4. 5A 47. 0mohm Power SOP8 Automotive

Renesas

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包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：TRANSISTOR

Renesas Electronics America Inc

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：TRANSISTOR

Renesas Electronics America Inc

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：TRANSISTOR

Renesas Electronics America Inc