N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The μPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES ? Full mold package with 4 circuits ? 4 V driving is possible ? Low on-state resistance RDS(on)1 = 165 m? MAX. (VGS = 10 V, ID = 1.5 A)

文件：38.92 Kbytes 頁數(shù)：4 Pages

NEC

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COMPOUND FIELD EFFECT POWER TRANSISTOR

FEATURES ? Full mold package with 4 circuits ? 4 V driving is possible ? Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A) ? Low input capacitance Ciss = 600 pF TYP.

文件：238.41 Kbytes 頁數(shù)：10 Pages

RENESAS

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N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION\nThe μPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver.FEATURES\n? Full mold package with 4 circuits\n? 4 V driving is possible\n? Low on-state resistance\n? RDS(on)1 = 165 m? MAX. (VGS = 10 V, ID = 1.5 A)\n? RDS(on)2 = 200 m? ? Full mold package with 4 circuits\n? 4 V driving is possible\n? Low on-state resistance\n? RDS(on)1 = 165 m? MAX. (VGS = 10 V, ID = 1.5 A)\n? RDS(on)2 = 200 m? MAX. (VGS = 4 V, ID = 1.5 A)\n? Low input capacitance Ciss = 600 pF TYP.?;

Renesas

瑞薩

COMPOUND FIELD EFFECT POWER TRANSISTOR

FEATURES ? Full mold package with 4 circuits ? 4 V driving is possible ? Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A) ? Low input capacitance Ciss = 600 pF TYP.

文件：238.41 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The μPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES ? Full mold package with 4 circuits ? 4 V driving is possible ? Low on-state resistance RDS(on)1 = 165 m? MAX. (VGS = 10 V, ID = 1.5 A)

文件：38.92 Kbytes 頁數(shù)：4 Pages

NEC

瑞薩