絲?。?strong>UML；Package：SOD123F；VOLTAGE: 50 to 1000 Volts CURRENT: 1.0 Amperes

文件：344.21 Kbytes 頁數(shù)：5 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/l11/marking.html">L11；Package：UMT5；General purpose transistor (isolated transistor and diode)

2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package. Features 1) Tr2: Small Signal Transistor Di1: Low VF 2) Small package Applications DC / DC converter Motor driver

文件：124.84 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/l12/marking.html">L12；Package：UMT5；General purpose transistor (isolated transistor and diode)

2SC4617and RB521S-30 are housed independently in a EMT5 or UMT5 package. Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package Applications DC / DC converter Motor driver

文件：362.64 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/l10/marking.html">L10；Package：SOT-353；Low-frequency transistor

Features 1) The 2SA1037AK and a diode are housed independently in a UMT package.

文件：25.54 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/l4/marking.html">L4；Package：SOT-353；General purpose transistor

General purpose transistor (isolated transistor and diode) 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package Applications DC / DC converter Motor driver Structure PNP Silicon epitaxial planar t

文件：82.89 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/l6/marking.html">L6；Package：SOT-353；General purpose transistor (isolated transistor and diode)

General purpose transistor (isolated transistor and diode) 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package Applications DC / DC converter Motor driver Structure Silicon epitaxial planar trans

文件：81.05 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UML1 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES: ? Class C Operation ? PG = 13 dB at 1.0 W/400 MHz ? Omnigold? Metalization System

文件：16.7 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF321 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES: ? Class C Operation ? PG = 10 dB at 10 W/400 MHz ? Omnigold? Metalization System

文件：16.45 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UML15 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES: ? Class C Operation ? PG = 10 dB at 15 W/400 MHz ? Omnigold? Metalization System

文件：16.92 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UML1SL is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: ? Class C Operation ? PG = 13 dB at 1.0 W/400 MHz ? Omnigold? Metalization System

文件：15.26 Kbytes 頁數(shù)：1 Pages

ASI