Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021AM BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise

文件：104.12 Kbytes 頁數(shù)：16 Pages

PHI

PHI

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021AM BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise

文件：104.12 Kbytes 頁數(shù)：16 Pages

PHI

PHI

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021M BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise ?

文件：107.51 Kbytes 頁數(shù)：16 Pages

PHI

PHI

Low cost dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1022M BICMOS device integrates prescalers, programmable dividers, a crystal oscillator/buffer and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd or a single LiIon cell in pocket phones, or from an external 3 V supply

文件：126.57 Kbytes 頁數(shù)：20 Pages

PHI

PHI

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

絲?。?a target="_blank" title="Marking" href="/a10/marking.html">A10；Package：UMT5；General purpose (dual digital transistors)

UMA10N / FMA10A / IMB17A Features 1) Two DTA113Z chips in a UMT or SMT package. UMG10N Features 1) Two DTA113Z chips in a UMT package.

文件：35.48 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美

ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V

DESCRIPTION These 500 watt transient voltage suppressors offer capabilities only found in larger packages. They are used for protecting against a variety of transients from inductive switching environments or lower levels of induced secondary lightning effects of IEC61000-4-5. It offers the same

文件：255.13 Kbytes 頁數(shù)：4 Pages

MICROSEMI

美高森美