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          首頁(yè) >UHB>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          UHB20FCT

          Dual Common-Cathode Ultrafast Recovery Rectifier

          Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 24

          文件:141.8 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB20FCT

          Dual Common-Cathode Ultrafast Recovery Rectifier

          FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-22

          文件:143.49 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB20FCT

          Ultrafast Recovery Diode

          FEATURES · Soft Recovery Characteristics · Glass Passivated Junctions · Excellent High Temperature Switching APPLICATIONS · Switching Power Supplies · Freewheeling Diode · DC-to-DC Converters

          文件:326.91 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          UHB20FCT-E3/4W

          Dual Common-Cathode Ultrafast Recovery Rectifier

          Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 24

          文件:141.8 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB20FCT-E3/8W

          Dual Common-Cathode Ultrafast Recovery Rectifier

          Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 24

          文件:141.8 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB20FCT-E3SLASH4W

          Dual Common-Cathode Ultrafast Recovery Rectifier

          Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 24

          文件:141.8 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB20FCT-E3SLASH8W

          Dual Common-Cathode Ultrafast Recovery Rectifier

          Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES ? Oxide planar chip junction ? Ultrafast recovery times ? Soft recovery characteristics ? Low switching losses, high efficiency ? High forward surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 24

          文件:141.8 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          UHB50SC12E1BC3N

          絲?。?a target="_blank" title="Marking" href="/uhb50sc12e1bc3n/marking.html">UHB50SC12E1BC3N;Package:E1B;1200V-50A SiC Half-Bridge Module

          Features * On-resistance: RDS(on) = 19mW (typ) * Operating temperature: 150°C (max) * Excellent reverse recovery: Qrr = 495nC * Low body diode voltage: VFSD= 1.2V * Low gate charge: QG = 85nC * Threshold voltage VG(th): 5V (typ) allowing 0 to 15V drive * ESD protected: HBM class 2 and CDM c

          文件:1.45817 Mbytes 頁(yè)數(shù):13 Pages

          QORVO

          威訊聯(lián)合

          UHBM45

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI UHBM45 is Designed for FEATURES: ? Omnigold? Metalization System

          文件:18.19 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          UHBS15-1

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI UHBS15-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. FEATURES: ? Internal Input Matching Network ? PG = 9.5 dB at 15 W/ 900 MHz ? Omnigold? Metalization System

          文件:18.33 Kbytes 頁(yè)數(shù):1 Pages

          ASI

          詳細(xì)參數(shù)

          • 型號(hào):

            UHB

          • 制造商:

            SCHURTER

          • 制造商全稱:

            Schurter Inc.

          • 功能描述:

            Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          VISHAY
          12+
          TO-263
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          VISHAY
          17+
          TO-263
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          Vishay
          24+
          NA
          3000
          進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
          詢價(jià)
          VISHAY
          25+23+
          TO-263
          33166
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          VISHAY
          18+
          TO-263
          85600
          保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
          詢價(jià)
          ASI
          24+
          105
          現(xiàn)貨供應(yīng)
          詢價(jià)
          VIS
          25+
          TO-263
          30000
          全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
          詢價(jià)
          VISHAY
          24+
          TO-263
          65200
          一級(jí)代理/放心采購(gòu)
          詢價(jià)
          ASI
          23+
          TO-59
          8510
          原裝正品代理渠道價(jià)格優(yōu)勢(shì)
          詢價(jià)
          VISHAY
          25+
          TO-263
          8000
          現(xiàn)貨
          詢價(jià)
          更多UHB供應(yīng)商 更新時(shí)間2026-1-20 9:04:00
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