High Current Density Surface Mount Ultrafast Rectifiers

FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Oxide planar chip junction ? Ultrafast recovery times for high frequency ? Low forward voltage drop, low power loss ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified ?

文件：112.04 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Ultrafast Rectifiers

FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Oxide planar chip junction ? Ultrafast recovery times for high frequency ? Low forward voltage drop, low power loss ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified ?

文件：93.26 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Ultrafast Rectifiers

文件：100.51 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Ultrafast Rectifiers

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nOxide planar chip junction;

Vishay

威世

DIODE ARRAY GP 150V 2A TO277A

Vishay

威世

DIODE ARRAY GP 150V 2A TO277A

Vishay

威世

Package：TO-277，3-PowerDFN；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY GP 150V 2A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 150V 2A TO277A

Vishay General Semiconductor - Diodes Division

Package：TO-277，3-PowerDFN；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：DIODE GEN PURP 150V 2A TO277A

Vishay General Semiconductor - Diodes Division