RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features ? N-Channel Enhancement Mode Device ? DMOS Structure ? Lower Capacitances for Broadband Operation ? High Saturated Output Power ? Lower Noise Figure Than Competitive Devices

文件：188.74 Kbytes 頁(yè)數(shù)：3 Pages

MACOM

RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz

Features ? N-Channel Enhancement &lode Device ? DMOS Structure ? Lower Capacitances for Broadband Operation ? High Saturated Output Power ? Lower Noise Figure Than Competitive Devices

文件：214.52 Kbytes 頁(yè)數(shù)：3 Pages

MACOM

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector with Delay circuit

GENERAL DESCRIPTIONS The VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detect

文件：1.32054 Mbytes 頁(yè)數(shù)：20 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

Low voltage, Low power, ?1 High detect accuracy CMOS Voltage Detector with Delay circuit

GENERAL DESCRIPTIONS The VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detect

文件：1.32054 Mbytes 頁(yè)數(shù)：20 Pages

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司