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    首頁 >UCC28C52>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    UCC28C52DR

    絲?。?a target="_blank" title="Marking" href="/28c52/marking.html">28C52;Package:SOIC;UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

    文件:3.20649 Mbytes 頁數(shù):56 Pages

    TI

    德州儀器

    UCC28C52DR

    絲?。?a target="_blank" title="Marking" href="/28c52/marking.html">28C52;Package:SOIC;UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

    文件:3.39027 Mbytes 頁數(shù):53 Pages

    TI

    德州儀器

    UCC28C52-Q1

    UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

    文件:3.46603 Mbytes 頁數(shù):56 Pages

    TI

    德州儀器

    UCC28C52-Q1

    UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

    文件:3.20649 Mbytes 頁數(shù):56 Pages

    TI

    德州儀器

    UCC28C52-Q1

    UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

    1 Features ? Undervoltage lockout options to support both Si and SiC MOSFET applications ? 30-V VDD absolute maximum voltage ? 1-MHz maximum fixed frequency operation ? 50-μA startup current, 75-μA maximum ? Low operating current: 1.3 mA (at fOSC = 52 kHz) ? Fast 35-ns, cycle-by-cycle overc

    文件:3.39027 Mbytes 頁數(shù):53 Pages

    TI

    德州儀器

    UCC28C52-Q1

    UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

    1 Features ? AEC-Q100 qualified with the following results: – Device temperature grade 1: -40?C to 125?C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V ? Functional Safety-Capable – Documentation available to aid functional safety system design ? 28

    文件:3.38736 Mbytes 頁數(shù):52 Pages

    TI

    德州儀器

    UCC28C52QDRQ1

    UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

    1 Features ? AEC-Q100 qualified with the following results: – Device temperature grade 1: -40?C to 125?C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V ? Functional Safety-Capable – Documentation available to aid functional safety system design ? 28

    文件:3.38433 Mbytes 頁數(shù):52 Pages

    TI

    德州儀器

    UCC28C52QDRQ1

    UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

    1 Features ? AEC-Q100 qualified with the following results: – Device temperature grade 1: -40?C to 125?C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V ? Functional Safety-Capable – Documentation available to aid functional safety system design ? 28

    文件:3.38736 Mbytes 頁數(shù):52 Pages

    TI

    德州儀器

    UCC28C52-Q1

    汽車類 30V 低功耗電流模式 PWM 控制器,14.5V/9V UVLO,100% 占空比

    UCC28C5x-Q1 系列器件為高性能電流模式 PWM 控制器,可用于驅動各種應用中的 Si 和 SiC MOSFET。UCC28C5x-Q1 系列是 UCC28C4x-Q1 的更高效、更穩(wěn)健的版本。\n\n除持續(xù)支持 Si MOSFET 的現(xiàn)有 UVLO 閾值 (UCC28C50-55-Q1) 外,UCC28C5x-Q1 系列還具有可確保 SiC MOSFET 可靠運行的新 UVLO 閾值 (UCC28C56-59-Q1)。\n\nVDD 絕對最大額定電壓從 20V 增加至 30V,便于以理想方式驅動 20Vgs、18Vgs 或 15Vgs SiC MOSFET 的柵極,同時可無需使用外部 ? 具有符合 AEC-Q100 標準的下列特性: \n? 器件 HBM 分類等級 2:±2kV\n? 提供功能安全 \n? 28V VDD 建議上限工作等級 \n? SiC 和 SiC MOSFET 應用\n? 工作頻率:1MHz\n? 在 52kHz 下工作電流低至 1.3 mA\n? 峰值驅動電流為 ±1A\n? 初始修整的 2.5V 誤差放大器基準為 ±1%\n? 與 UCC28C4x-Q1 引腳對引腳兼容,可直接替代;

    TI

    德州儀器

    技術參數(shù)

    • Control mode:

      Current

    • Duty cycle (max) (%):

      100

    • Switching frequency (max) (kHz):

      1000

    • Features:

      Adjustable switching frequency

    • UVLO thresholds on/off (V):

      14.5/9

    • Operating temperature range (°C):

      -40 to 150

    • Rating:

      Automotive

    • Gate drive (typ) (A):

      1

    • TI functional safety category:

      Functional Safety-Capable

    • 封裝:

      SOIC (D)

    • 引腳:

      8

    • 尺寸:

      29.4 mm2 4.9 x 6

    供應商型號品牌批號封裝庫存備注價格
    TI德州儀器
    22+
    24000
    原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
    詢價
    TI/德州儀器
    25+
    原廠封裝
    10280
    原廠授權代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源!
    詢價
    TI/德州儀器
    25+
    原廠封裝
    10280
    詢價
    TI/德州儀器
    25+
    原廠封裝
    11000
    詢價
    TI/德州儀器
    25+
    原廠封裝
    10280
    詢價
    TI
    25+
    SOIC-8
    12369
    樣件支持,可原廠排單訂貨!
    詢價
    TI
    25+
    SOIC-8
    12421
    正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
    詢價
    TI(德州儀器)
    25+
    SOIC-8
    500000
    源自原廠成本,高價回收工廠呆滯
    詢價
    更多UCC28C52供應商 更新時間2026-1-23 8:01:00

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