絲?。?a target="_blank" title="Marking" href="/uc2715d/marking.html">UC2715D；Package：SOIC；Complementary Switch FET Drivers

1FEATURES ? Single Input (PWM and TTL Compatible) ? High-Current Power FET Driver, 1-A Source and 2-A Sink ? Auxiliary Output FET Driver, 0.5-A Source and 1-A Sink ? Time Delays Between Power and Auxiliary Outputs Independently Programmable from 50 to 500-ns ? Time Delay or True Zero-Volt

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TI

德州儀器

Complementary Switch FET Drivers

文件：773.37 Kbytes 頁數(shù)：16 Pages

TI

德州儀器

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES ? Low on-state resistance RDS(on)1 = 4.6 mΩ MAX. (VGS = ?10 V, ID = ?9.0 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = ?4.5 V, ID = ?9.0 A) ? L

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RENESAS

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1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES ? Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. ? High power gain : 19 dB TYP. @ f = 0.5 GHz ? Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga

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NEC

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