絲印：U8%；Package：TSSOP6；20 V, dual N-channel Trench MOSFET

文件：1.17608 Mbytes 頁(yè)數(shù)：16 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 頁(yè)數(shù)：16 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SSOP5；Voltage Detector IC built in Delay Citcuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：222.67 Kbytes 頁(yè)數(shù)：6 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 頁(yè)數(shù)：4 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SOT-23；NPN General Purpose Amplifier

Features ? This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. ? Sourced from Process 19. ? See BCW65C for characteristics.

文件：49.7 Kbytes 頁(yè)數(shù)：3 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SOT23；NPN switching transistors

FEATURES ?High current (max. 800 mA) ?Low voltage (max. 40 V). APPLICATIONS ?Switching and linear applications. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16.

文件：376.31 Kbytes 頁(yè)數(shù)：9 Pages

NEXPERIA

安世

絲印：U8*；Package：SOT-23；NPN switching transistors

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. FEATURES ? High current (max. 800 mA) ? Low voltage (max. 40 V). APPLICATIONS ? Switching and linear applications.

文件：145.71 Kbytes 頁(yè)數(shù)：8 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8*；Package：SOT-23；NPN switching transistors

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. FEATURES ? High current (max. 800 mA) ? Low voltage (max. 40 V). APPLICATIONS ? Switching and linear applications.

文件：45.87 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications ? General regulation functions ? Non-repetitive peak reverse power dissipation: ? 40 W ? Wide working

文件：988.38 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/u8/marking.html">U8；Package：SOD323F；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Non-repetitive peak reverse power dissipation: ≤ 100 W for types ≤ 6.8 V ? Non-repetitive peak reverse power dissipation

文件：310.63 Kbytes 頁(yè)數(shù)：13 Pages

NEXPERIA

安世