MOS FET Power Amplifier

Features ? High stability: Load VSWR = 20 : 1 ? Low power control current: 400 μA ? Thin package: 5 mmt

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HITACHIHitachi Semiconductor

日立日立公司

MOS FET Power Amplifier

?? High stability: Load VSWR = 20 : 1\n?? Low power control current: 400 μA\n?? Thin package: 5 mmt;

HITACHI

日立

32-Bit MCU Renesas Advanced (RA) Family Renesas RA2 Series

文件：1.25855 Mbytes 頁(yè)數(shù)：100 Pages

RENESAS

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■ RISC-V Core ● Renesas RISC-V instruction-set architecture (RV32I [MACB]) ● Maximum operating frequency: 48 MHz ● Debug and Trace: RISC-V External Debug Support ● Debug Port: cJTAG ■ Memory ● 128-KB code flash memory ● 4 KB data flash ● 16 KB SRAM ● 128-bit unique ID

文件：1.57659 Mbytes 頁(yè)數(shù)：72 Pages

RENESAS

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UPI

力智電子