Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

1FEATURES ? Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range of 2.3V to 5.5V ? Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – Very Low Dropout: 100 mV (Max) at 50 mA ? Control and Communication Through GPIO Interfac

文件：1.16295 Mbytes 頁數(shù)：19 Pages

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

文件：755.65 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

雙 SIM 卡電源，配備電平轉(zhuǎn)換器和專用雙路 LDO

TXS4558 是一款完整的雙電源待機智能身份模塊 (SIM) 卡解決方案，用于將無線基帶處理器與兩個單獨的 SIM 用戶卡相連，以存儲移動手機應用程序的數(shù)據(jù)。 這是一款定制器件，用于把單個 SIM/UICC 接口擴展至能夠支持兩個 SIM/UICC （通用集成芯片卡）。該器件不但符合 ISO / IEC 智能卡接口要求，而且還支持 GSM 與 3G 移動標準。 它包含能夠支持 Class B (2.95 V) 與 Class C (1.8 V) 接口的高速電平轉(zhuǎn)換器、低壓降 (LDO) 穩(wěn)壓器，可在 2.95 V Class B 與 1.8 V Class C 接口之間選擇輸出電壓。 簡單G ? 電平轉(zhuǎn)換器 \n? VBATT的電壓范圍 2.3 V 至 5.5 V\n? 低壓降 (LDO) 穩(wěn)壓器 \n? 1.8-V 或者 2.95-V 可選輸出電壓\n? 通過GPIO 接口與基帶處理器實現(xiàn)控制和通信\n? ESD 保護等級超過 JESD 22 標準的要求 \n? 500-V 充電設備模式（C101）\n? 封裝 \n? 20-引腳 QFN (3 mm x 3 mm);

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

1FEATURES ? Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range of 2.3V to 5.5V ? Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – Very Low Dropout: 100 mV (Max) at 50 mA ? Control and Communication Through GPIO Interfac

文件：1.16295 Mbytes 頁數(shù)：19 Pages

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

1FEATURES ? Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range of 2.3V to 5.5V ? Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – Very Low Dropout: 100 mV (Max) at 50 mA ? Control and Communication Through GPIO Interfac

文件：1.16295 Mbytes 頁數(shù)：19 Pages

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

1FEATURES ? Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range of 2.3V to 5.5V ? Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – Very Low Dropout: 100 mV (Max) at 50 mA ? Control and Communication Through GPIO Interfac

文件：1.16295 Mbytes 頁數(shù)：19 Pages

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

1FEATURES ? Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range of 2.3V to 5.5V ? Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – Very Low Dropout: 100 mV (Max) at 50 mA ? Control and Communication Through GPIO Interfac

文件：1.16295 Mbytes 頁數(shù)：19 Pages

TI

德州儀器

Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO

文件：755.65 Kbytes 頁數(shù)：18 Pages

TI

德州儀器

包裝：散裝 功能：智能卡 類別：開發(fā)板，套件，編程器 評估和演示板及套件 描述：EVAL MODULE FOR TXS4558

TI

德州儀器

Package：20-WFQFN 裸露焊盤；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 轉(zhuǎn)換器，電平移位器 描述：IC TRNSLTR BIDIRECTIONAL 20QFN

TI

德州儀器