Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：Power amplifier / Switching\nPolarity：NPN\nComplementary Product：TTB1067B\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國(guó) Collector Current IC 2 A \nCollector Current ICP 3 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1.5 W \nCollector-Base Voltage VCBO 80 V \nCollector-emitter voltage VCEO 80 V ;

Toshiba

東芝

絲印：D1509B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type (Darlington Transistor)

Applications ? Micromotor Drivers ? Hammer Drivers ? Switching ? Power Amplifiers Features (1) High DC current gain : hFE = 2000 (min) (VCE = 2 V, IC = 1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) (3) Complementary to TTB1067B

文件：269.63 Kbytes 頁(yè)數(shù)：7 Pages

TOSHIBA

東芝

包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANSISTOR NPN TO126N

Toshiba Semiconductor and Storage

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS PPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. PPB1509GV is a shrink package version of PPB587G so that this small package contributes to reduce the mounting space. PPB1509GV is m

文件：117.92 Kbytes 頁(yè)數(shù)：16 Pages

NEC

瑞薩

800 MHz INPUT DIVIDE BY 2, 4 PRESCALER IC FOR PORTABLE SYSTEMS

800 MHz INPUT DIVIDE BY 2, 4 PRESCALER IC FOR PORTABLE SYSTEMS The μPB1511TB is a silicon monolithic integrated circuit designed as a divide by 2, 4 prescaler IC for portable radio systems. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. C

文件：51.41 Kbytes 頁(yè)數(shù)：8 Pages

NEC

瑞薩

NEC 1.0 GHZ DIVIDE BY 2/4/8 PRESCALER

文件：338.06 Kbytes 頁(yè)數(shù)：8 Pages

CEL