絲?。?a target="_blank" title="Marking" href="/3f/marking.html">3F；Package：PW-Mini；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ? High-Speed Switching ? DC-DC Converters Features (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ.) (IC = 1.2 A)

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TOSHIBA

東芝

Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

Toshiba

東芝

PowerPC based CPU Board with two PMC Slots

Application Information The TVME8400 VMEbus CPU board is based on the high integrated MPC8245 Power PC microprocessor with a G2 MPC603e CPU core, a powerful Memory Controller and PCI interface. The TVME8400 provides two PMC slots (32 bit, 33 MHz PCI) with VME64x P2 backplane I/O mapping accordin

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TEWS

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband performance. FEATURES: ? 470-860 MHz ? Common Emitter ? PG = 8.5

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ASI

NPN SILICON RF POWER TRANSISTOR

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ASI