Power transistor for high-speed switching applications

Feature：High hFE\nApplication Scope：High-speed high-voltage switching / High-speed DC/DC converters / Switching regulators\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1 A \nCollector Current ICP 2 A \nCollector power dissipation PC 40 W \nCollector power dissipation PC 1 W \nCollector-Base Voltage VCBO 900 V \nCollector-emitter voltage VCEO 800 V ;

Toshiba

東芝

絲印：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications ? High-Speed High-Voltage Switching ? Switching Voltage Regulators ? High-Speed DC-DC Converters Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 μs (typ.),

文件：171.05 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：PB-F POWER TRANSISTOR NEW PW-MOL

Toshiba Semiconductor and Storage

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVU014 is a gold metallized RF power transistor designed for Class-A, UHF and band IV and V TV transmitter applications. It utilizes emitter ballasting for high reliability and ruggedness. FEATURES: ? Common Emitter: Class-A, 25 V ? PG = 8.5 dB at 14 W/860 MHz ? Omnigold?

文件：17.62 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

文件：71.48 Kbytes 頁數(shù)：3 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVV014 is Designed for FEATURES: ? Omnigold? Metalization System

文件：17.59 Kbytes 頁數(shù)：1 Pages

ASI