TOSHIBA Transistor Silicon NPN Epitaxial Type

○ Power Amplifier Applications ○ Power Switching Applications ? Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（ IC = 1A） ? High-speed switching: tstg = 0.4 μs (typ.)

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TOSHIBA

東芝

Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 3 A \nCollector Current ICP 5 A \nCollector power dissipation PC 15 W \nCollector power dissipation PC 2 W \nCollector-Base Voltage VCBO 160 V \nCollector-emitter voltage VCEO 80 V ;

Toshiba

東芝

Package：TO-220-3 整包；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 3A TO220NIS

Toshiba Semiconductor and Storage

Package：TO-220-3 整包；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 3A TO220NIS

Toshiba Semiconductor and Storage