絲?。?a target="_blank" title="Marking" href="/a005/marking.html">A005；Package：PW-Mold；Bipolar Transistors Silicon PNP Epitaxial Type

Applications ? High-Speed Switching ? DC-DC Converters Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ.)

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TOSHIBA

東芝

Power transistor for high-speed switching applications

Feature：High hFE / Low saturation voltage\nApplication Scope：DC/DC converters / High-speed switching\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -5 A \nCollector Current ICP -10 A \nCollector power dissipation PC 24 W \nCollector power dissipation PC 1.2 W \nCollector-Base Voltage VCBO -50 V \nCollector-emitter voltage VCEO -50 V ;

Toshiba

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TVU005 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE: ? Gold Metalization ? Emitter Ballasting

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ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The TVU005B is a Common Emitter Device Designed for High Linearity Class A Band IV and V Television Transmitters. FEATURES INCLUDE: ? High Gain - 13 dB min. ? Gold Metalization ? Emitter Ballasting

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ASI