絲印：tT2；Package：HXSON8；Bidirectional voltage level translator for open-drain and push-pull applications

1 General description The NVT2001/02 are bidirectional voltage level translators operational from 1.0 V to 3.6 V (Vref(A)) and 1.8 V to 5.5 V (Vref(B)), which allow bidirectional voltage translations between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull application

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恩XP

MARKETING INFORMATION TT200F

MARKETING INFORMATION TT200F

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EUPEC

Driver Applications

Driver Applications Features ? High DC current gain. ? Wide ASO. ? Low saturation voltage. ? Adoption of MBIT process. Application ? Suitable for use in control motor drivers, printer hammer drivers, relay drivers, audio output and constant-voltage regulators.

文件：52.52 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

ULTRAHIGH-DEFINITION CRT DISPLAY HORIZONTAL DEFLECTION OUTPUT APPLICATIONS

ULTRAHIGH-DEFINITION CRT DISPLAY HORIZONTAL DEFLECTION OUTPUT APPLICATIONS Features High Speed High breakdown voltage (VCBO = 1500V) High reliability ( Adoption of HVP process) Adoption of MBIT process

文件：481.47 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

For CRT display horizontal deflection output

Features: High speed. ?High voltage resistance (VCBO=1500V). - High reliability (HVP process adopted). ?MBIT process adopted.

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SANYO

三洋

BEAM TETRODES

[MARCONIS WIRELESS TELEGRAPH COMPANY LIMITED]

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ETCList of Unclassifed Manufacturers

未分類制造商

Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features ? High speed. ? High breakdown voltage (VCBO=1500V). ? High reliability (Adoption of HVP process). ? Adoption of MBIT process. ? On-chip damper diode.

文件：40.84 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)

? High speed. ? High breakdown voltage (VCBO=1500V). ? High reliability (Adoption of HVP process). ? Adoption of MBIT process. ? On-chip damper diode.

文件：40.37 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

COLOR TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS(NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR)

? High speed. ? High breakdown voltage (VCBO=1500V). ? High reliability (Adoption of HVP process). ? Adoption of MBIT process. ? On-chip damper diode.

文件：40.37 Kbytes 頁數(shù)：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.8V(Max) @IC=6A APPLICATIONS · Switching Regulators · Converters · Power Amplifiers

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ISC

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