High bandwidth (20 MHz) low offset (200 μV) rail-to-rail 5 V Op Amp

Features ? Gain bandwidth product 20 MHz, unity gain stable ? Low input offset voltage: 50 μV typ., 200 μV max. ? Low input bias current: 2 pA typ. ? Low noise: 7 nV/√Hz ? Slew rate: 13 V/μs ? Wide supply voltage range: 2.0 V to 5.5 V ? Rail-to-rail input and output ? 4 kV HBM ESD toleranc

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高帶寬（20 MHz）低失調(diào)（200 μV）軌到軌5V運算放大器

TSV772是雙20 MHz帶寬單位增益穩(wěn)定放大器。軌到軌輸入級和13 V/μs的轉(zhuǎn)換速率使TSV772成為低側(cè)電流測量的理想選擇。200 μV的最大輸入電壓提供高精度，允許精確放大小振幅輸入信號。\n\n TSV772可以在2.0 V - 5.5 V的單電源供電下運行；完全特征化的輸出電容可達(dá)47 pF，也可輕松用作A/D轉(zhuǎn)換器輸入緩沖區(qū)。 ? 增益帶寬積20 MHz，單位增益穩(wěn)定 \n? 低輸入偏移電壓：典型值為50 μV，最大值為200 μV。 \n? 低輸入偏置電流：2 pA（典型值）。 \n? 低噪音：7 nV/√Hz \n? 電壓轉(zhuǎn)換率：13 V/μs \n? 寬電源電壓范圍：2.0 V至5.5 V? 軌到軌輸入和輸出 \n? 4 kV HBM ESD容差 \n? 輸入共模范圍包括低軌 \n? 更寬的溫度范圍：-40°C 至 +125 °C \n? 可提供汽車級版本 \n? 優(yōu)勢：測量精度幾乎不受噪聲或輸入偏置電流的影響高頻信號調(diào)節(jié);

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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN771 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology Thi

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Quad smart power solid state relay for complete H-bridge configurations

Description The VN771K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower? M0-3 Technology. This device is suitable to drive a DC

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QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN771K-E is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower? M0-3 Technology. This device is suitable to drive a D

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