200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features ? Wide supply voltage: 4 V - 36 V ? High output current 200 mA ? Rail-to-rail output, low rail input ? Gain bandwidth product: 3.1 MHz ? High slew rate: 2 V/μs ? Internal thermal shutdown & output current limiter ? Enhanced RF noise immunity ? High tolerance to ESD: 4 kV HBM ? Ex

文件：2.04553 Mbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

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200 mA輸出電流（帶熱關(guān)斷和輸出限流器）、3.1 MHz@36 V BiCMOS雙運(yùn)算放大器

TSB582是一種單位增益穩(wěn)定型雙運(yùn)算放大器，具有高電壓和高電流能力，內(nèi)置防止超溫和電流過(guò)載的保護(hù)機(jī)制。此外，TSB582還增強(qiáng)了抵抗ESD和RF噪聲干擾的能力。\n\n 通常每通道可輸出最高200 mA電流，以驅(qū)動(dòng)低電阻感性負(fù)載（如分角器、線路輸出電纜，以及壓電式執(zhí)行器）。\n\n TSB582的兩個(gè)大電流輸出放大器可以直接驅(qū)動(dòng)采取橋接模式或并聯(lián)連接的負(fù)載，使輸出的受電/供電電流增加一倍。此外，TSB582有兩種空間節(jié)約型封裝選項(xiàng) - SO8封裝具有裸露焊盤，而DFN8采用表面可濕和裸露焊盤。這兩種封裝均能承受-40 °C至+125 °C的工作溫度范圍，符合汽車應(yīng)用要求。 ? 寬電源電壓：4 V - 36 V \n? 高輸出電流：200 mA \n? 軌對(duì)軌輸出，低電源軌輸入 \n? 增益帶寬積：3.1 MHz \n? 高轉(zhuǎn)換率：2 V/μs \n? 內(nèi)置熱關(guān)斷&輸出電流限制功能 \n? 增強(qiáng)了抵抗RF噪聲的能力 \n? 出色的耐靜電性能：4 kV HBM? 更寬的溫度范圍：-40°C 至 125 °C \n? 車規(guī)級(jí) \n? 低噪聲：45 nV/√Hz @ 1 kHz \n? Icc（典型值） = 2.3 mA \n? 單位增益穩(wěn)定 \n? 低偏移電壓：最高2.4 mV (25°C)/3 mV（全溫度范圍） \n? 低輸入偏置電流 \n? 封裝：SO8和DFN;

ST

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絲?。?a target="_blank" title="Marking" href="/k2h/marking.html">K2H；Package：SO8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features ? Wide supply voltage: 4 V - 36 V ? High output current 200 mA ? Rail-to-rail output, low rail input ? Gain bandwidth product: 3.1 MHz ? High slew rate: 2 V/μs ? Internal thermal shutdown & output current limiter ? Enhanced RF noise immunity ? High tolerance to ESD: 4 kV HBM ? Ex

文件：2.04553 Mbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/k2h/marking.html">K2H；Package：DFN8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features ? Wide supply voltage: 4 V - 36 V ? High output current 200 mA ? Rail-to-rail output, low rail input ? Gain bandwidth product: 3.1 MHz ? High slew rate: 2 V/μs ? Internal thermal shutdown & output current limiter ? Enhanced RF noise immunity ? High tolerance to ESD: 4 kV HBM ? Ex

文件：2.04553 Mbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/k2i/marking.html">K2I；Package：SO8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features ? Wide supply voltage: 4 V - 36 V ? High output current 200 mA ? Rail-to-rail output, low rail input ? Gain bandwidth product: 3.1 MHz ? High slew rate: 2 V/μs ? Internal thermal shutdown & output current limiter ? Enhanced RF noise immunity ? High tolerance to ESD: 4 kV HBM ? Ex

文件：2.04553 Mbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k2i/marking.html">K2I；Package：DFN8；200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier

Features ? Wide supply voltage: 4 V - 36 V ? High output current 200 mA ? Rail-to-rail output, low rail input ? Gain bandwidth product: 3.1 MHz ? High slew rate: 2 V/μs ? Internal thermal shutdown & output current limiter ? Enhanced RF noise immunity ? High tolerance to ESD: 4 kV HBM ? Ex

文件：2.04553 Mbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

意法半導(dǎo)體