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          首頁 >TS8510VB>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TS8510VB

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. ?? GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

          文件:88.89 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES ? Package type: chip ? Package form: single chip ? Technology: surface emitter ? Dimensions chip (L x W x H

          文件:89.42 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB

          Specification of High Power IR Emitting Diode Chip

          文件:87.85 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB_V01

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. ?? GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

          文件:88.89 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB_V02

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES ? Package type: chip ? Package form: single chip ? Technology: surface emitter ? Dimensions chip (L x W x H

          文件:89.42 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB-SD-F

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. ?? GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and a

          文件:88.89 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB-SD-F

          Specification of High Power IR Emitting Diode Chip

          DESCRIPTION TS8510VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES ? Package type: chip ? Package form: single chip ? Technology: surface emitter ? Dimensions chip (L x W x H

          文件:89.42 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          TS8510VB

          Specification of High Power IR Emitting Diode Chip

          Vishay

          威世

          TS8510VB-SF-F

          包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:光電器件 LED 發(fā)射器 - 紅外,紫外,可見光 描述:PHOTO SENSOR

          Vishay Semiconductor Opto Division

          Vishay Semiconductor Opto Division

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          24+
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          1000
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          ST
          2025+
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          3587
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          Tagore
          177
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          TESOEL
          2023+
          25
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          TESOEL
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          SMD
          4560
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          24+
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          200000
          原裝進(jìn)口正口,支持樣品
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          24+
          NA
          16900
          支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!
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          25+
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          16900
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          2511
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          16900
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          更多TS8510VB供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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