絲?。?a target="_blank" title="Marking" href="/s8e65h/marking.html">S8E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications ? Power Factor Correction ? Solar Inverters ? Uninterruptible Power Supplies ? DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 μA (typ.

文件：467.38 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

東芝

SiC Schottky Barrier Diode

文件：157.68 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

SiC Schottky Barrier Diode

文件：285.86 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝