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DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES ? Dual chip type ? Low on-resistance RDS(on)1 = 32 m? MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 45 m? MAX. (VGS = 4.5

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