| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?strong>TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.66611 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?strong>TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/tps7h2201hkrem/marking.html">TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.66611 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/tps7h2201hkrem/marking.html">TPS7H2201HKREM;Package:CFP;TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch 1 Features 1? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg ? Integrated single 文件:1.55903 Mbytes 頁數(shù):40 Pages | TI 德州儀器 | TI | ||
絲印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) 文件:2.74487 Mbytes 頁數(shù):49 Pages | TI 德州儀器 | TI | ||
絲印:TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/tps7h2201hkrem/marking.html">TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.66611 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI | ||
絲?。?a target="_blank" title="Marking" href="/tps7h2201hkrem/marking.html">TPS7H2201HKREM;Package:CFP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse 1 Features ? Standard micro circuit available, SMD 5962R17220 ? Vendor item drawing available, VID V62/23608 ? Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i 文件:2.70016 Mbytes 頁數(shù):51 Pages | TI 德州儀器 | TI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源! |
詢價(jià) | ||
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
詢價(jià) | |||
TI/德州儀器 |
25+ |
原廠封裝 |
9999 |
詢價(jià) | |||
TI |
24+ |
原廠封裝 |
8000 |
原廠原裝,價(jià)格優(yōu)勢,歡迎洽談! |
詢價(jià) | ||
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
詢價(jià) | |||
TI |
25+ |
9-VQFN-HR(3x2) |
12369 |
樣件支持,可原廠排單訂貨! |
詢價(jià) | ||
TI |
25+ |
9-VQFN-HR(3x2) |
12421 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
TI/德州儀器 |
25+ |
原廠封裝 |
11000 |
詢價(jià) |
相關(guān)芯片絲印
更多- TPS7H2201HKR/EM
- TPS7H2201HKR/EM
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- TPS7H5001HFTSLASHEM
- TPS7H5001HFTSLASHEM
- TPS7H5001HFTSLASHEM
- TPS7H5002HFT/EM
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相關(guān)庫存
更多- TPS7H2201HKR/EM
- TPS7H2201HKR/EM
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- V62/23609-01XE
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- TPS7H2211HKRSLASHEM
- TPS7H2211HKR/EM
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- TPS7H4002HKHSLASHEM
- TPS7H4011HLB/EM
- TPS7H4011HLB/EM
- TPS7H4011HLBSLASHEM
- TPS7H5001HFT/EM
- TPS7H5001HFT/EM
- TPS7H5001HFTSLASHEM
- TPS7H5001HFTSLASHEM
- TPS7H5001HFT/EM
- TPS7H5002HFT/EM
- TPS7H5002HFTSLASHEM
- TPS7H5002HFTSLASHEM
- TPS7H5002HFT/EM
- TPS7H5003HFT/EM
- TPS7H5003HFT/EM
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