絲印：PHUI；Package：SOT-23；TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1? 200-mA RF Low-Dropout Regulator With Enable ? Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) ? High PSRR (68 dB at 100 Hz) ? Low Noise (33 μVRMS, TPS73018) ? Fast Start-Up Time (50 μs) ? Stable With a 2.2-μF Ceramic Capacitor ? Exce

文件：865.36 Kbytes 頁數(shù)：31 Pages

TI

德州儀器

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features ? 200mA low-dropout regulator with enable ? Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) ? High PSRR (68dB at 100Hz) ? Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) ? Stable with a 2.2μF ceramic capacitor ? Excellent load, line

文件：3.16367 Mbytes 頁數(shù)：43 Pages

TI

德州儀器

MMCX PLUG R/A SEMI-RIGID, RG405

文件：137.04 Kbytes 頁數(shù)：2 Pages

POMONA

Pomona Electronics

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ? Production testing and qualification follow the standard AS6294/1 ? 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ? Wide driver bias range of 4.5V to 13.2V ? Up to 16.5V logic inputs (regardless of VDD level) ? Inverting and non-inverting inputs ? Integrated driver optim

文件：477.15 Kbytes 頁數(shù)：15 Pages

RENESAS

瑞薩

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ? Production testing and qualification follow the standard AS6294/1 ? 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ? Wide driver bias range of 4.5V to 13.2V ? Up to 16.5V logic inputs (regardless of VDD level) ? Inverting and non-inverting inputs ? Integrated driver optim

文件：477.15 Kbytes 頁數(shù)：15 Pages

RENESAS

瑞薩