TPS2838PWP集成電路（IC）的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

TPS2838PWP屬于集成電路（IC）的柵極驅(qū)動(dòng)器。由德州儀器制造生產(chǎn)的TPS2838PWP柵極驅(qū)動(dòng)器柵極驅(qū)動(dòng)器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來(lái)自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號(hào)連接到電源被控制通過(guò)的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動(dòng)的半導(dǎo)體配置相關(guān)。

FEATURES

Integrated Drive Regulator (4 V to 14 V)

Adjustable/Adaptive Dead-Time Control

4-A Peak current at VDRV of 14 V

10-V to 15-V Supply Voltage Range

TTL-Compatible Inputs

Internal Schottky Diode Reduces Part Count

Synchronous or Nonsynchronous Operation

Inverting and Noninverting Options

TSSOP PowerPad Package for Excellent

Thermal Performance

APPLICATIONS

Single or Multiphase Synchronous-Buck

Power Supplies

High-Current DC/DC Power Modules

DESCRIPTION

The TPS2838/39/48/49 devices are MOSFET

drivers designed for high-performance

synchronous power supplies. The drivers can

source and sink up to 4-A peak current at a 14-V

drive voltage. These are ideal devices to use with

power supply controllers that do not have on-chip

drivers. The low-side driver is capable of driving

loads of 3.3 nF in 10-ns rise/fall times and has

40-ns propagation delays at room temperature.

The MOSFET drivers have an integrated 150-mA

regulator, so the gate drive voltage can be

optimized for specific MOSFETs. The TPS2848

and TPS2849 have a fixed 8-V drive regulator,

while the TPS2838/39 allow the drive regulator to

be adjusted from 4 V to 14 V by selection of two

external resistors.

The devices feature VDRV to PGND shootthrough

protection with adaptive/adjustable

deadtime control. The deadtime, for turning on the

high-side FET from LOWDR transitioning low, is

adjustable with an external capacitor on the

DELAY pin. This allows compensation for the

effect the gate resistor has on the synchronous

FET turn off. The adaptive deadtime prevents the

turning on of the low-side FET until the voltage on

the BOOTLO pin falls below a threshold after the

high-side FET stops conducting. The high-side

drive can be configured as a ground referenced

driver or a floating bootstrap driver. The internal

Schottky diode minimizes the size and number of

external components needed for the bootstrap

driver circuit. Only one external ceramic capacitor

is required to configure the bootstrap driver.