絲?。?a target="_blank" title="Marking" href="/65r280d/marking.html">65R280D；Package：TO-220；650V Super-Junction Power MOSFET

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WUMC

紫光國微

超結(jié)功率 MOSFET

紫光國微

650V 0.28? N-channel MOSFET

? Description MME65R280Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

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MGCHIP

650V 0.28ohm N-channel MOSFET

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MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

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