采用 TO-220 封裝的 650V 110mΩ氮化鎵GaN FET

The TPH3208PS 650V, 110m? Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon,through lower ? 易于驅(qū)動 – 與標準柵極驅(qū)動器兼容\n? 低傳導(dǎo)、低開關(guān)損耗\n? 低 Qrr (54nC) – 無需任何續(xù)流二極管\n? GSD 引腳布局可提升高速設(shè)計\n? 通過 JEDEC 認證的 氮化鎵GaN技術(shù)\n? 符合限制有害物質(zhì)指令 (RoHS) 規(guī)范要求且不含鹵素\n? 實現(xiàn)更高效的拓撲 – 易于實施無橋圖騰柱設(shè)計\n? 快速切換，提高效率\n? 提高功率密度\n? 系統(tǒng)尺寸減小、重量減輕\n? BOM 成本更低;

Transphorm

650V GaN FET TO-220 Series

文件：1.74165 Mbytes 頁數(shù)：13 Pages

TRANSPHORM

Crystal Unit SMD 2.0x1.6 50.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Moisture Sensitivity Level (MSL) : Level-1 Description and Applications: Surface mount 2.0mmx1.6mm crystal unit for use in wireless

文件：177.24 Kbytes 頁數(shù)：8 Pages

TAI-SAW

嘉碩科技

Dual N-Channel MOSFET uses advanced trench technology

文件：1.40913 Mbytes 頁數(shù)：5 Pages

DOINGTER

杜因特

8-Bit Bidirectional Voltage-Level Translator for Open-Drain and Push-Pull Application

文件：383.48 Kbytes 頁數(shù)：11 Pages

UNIONSEMI

英聯(lián)