采用 TO-220 封裝的 650V 150mΩ?氮化鎵GaN FET

The TPH3206PSB 650V, 150m? Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved efficiency over silicon,through lower ? 易于驅(qū)動(dòng) – 與標(biāo)準(zhǔn)柵極驅(qū)動(dòng)器兼容\n? 低傳導(dǎo)、低開關(guān)損耗\n? 低 Qrr (52nC) – 無需任何續(xù)流二極管\n? GSD 引腳布局可提升高速設(shè)計(jì)\n? 通過 JEDEC 認(rèn)證的 氮化鎵GaN技術(shù)\n? 符合限制有害物質(zhì)指令 (RoHS) 規(guī)范要求且不含鹵素\n? 實(shí)現(xiàn)更高效的拓?fù)?– 易于實(shí)施無橋圖騰柱設(shè)計(jì)\n? 快速切換，提高效率\n? 提高功率密度\n? 系統(tǒng)尺寸減小、重量減輕\n? BOM 成本更低;

Transphorm

650V GaN FET in TO-220

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TRANSPHORM

Crystal Unit SMD 1.6x1.2 40MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless communications devices, especially for a n

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TAI-SAW

嘉碩科技

Crystal Unit SMD 1.6x1.2 40.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Moisture Sensitivity Level (MSL) : Level-1 Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless

文件：215.73 Kbytes 頁數(shù)：8 Pages

TAI-SAW

嘉碩科技

50dB AGC AMP VIDEO AMP

DESCRIPTION The μPC3206GR is Silicon monolithic IC designed for Digital DBS and Digital CATV receivers. This IC consists of a two stage gain control amplifier and a wideband linear video amplifier. This IC is packaged in 20-pin SSOP. Therefore, it can make RF block small. FEATURES ? Bro

文件：270.28 Kbytes 頁數(shù)：32 Pages

NEC

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